- 74 - mbrf735 thru mbrf7100 isolation 7.5 amps. schottky barrier rectifiers voltage range 35 to 100 volts current 7.5 amperes features plastic material used carries underwriters laboratory classifications 94v-0 metal silicon rectifier, majority carrier conduction low power loss, high efficiency high current capability, low forward voltage drop high surge capability for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications guardring for overvoltage protection high temperature soldering guaranteed: 260 o c/10 seconds,0.25?(6.35mm)from case mechanical data cases: ito-220ac molded plastic body terminals: lead solderable per mil-std-750, method 2026 polarity: as marked mounting position: any mounting torque: 5 in. - lbs. max weight: 0.08 ounce, 2.24 grams ito-220ac dimensions in inches and (millimeters) maximum ratings and electrical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol mbrf 735 mbrf 745 mbrf 750 mbrf 760 mbrf 790 mbrf 7100 units maximum recurrent peak reverse voltage v rrm 35 45 50 60 90 100 v maximum rms voltage v rms 24 31 35 42 63 70 v maximum dc blocking voltage v dc 35 45 50 60 90 100 v maximum average forward rectified current see fig. 1 i (av) 7.5 a peak repetitive forward current (square wave, 20khz) at tc=105 o c i frm 15.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 150 a peak repetitive reverse surge current (note 1) i rrm 1.0 0.5 a maximum instantaneous forward voltage at (note 2) i f =7.5a,tc=25 i f =7.5a,tc=125 i f =15a,tc=25 i f =15a,tc=125 v f 0.57 0.84 0.72 0.75 0.65 ? -- 0.92 0.82 ? -- v maximum instantaneous reverse current @ tc =25 at rated dc blocking voltage (note 1) @ tc=125 i r 0.1 15.0 0.5 1,000 0.1 - ma ma voltage rate of change (rated v r ) dv/dt 10,000 v/us maximum thermal resistance, (note 3) r jc 7.0 /w typical junction capacitance cj 350 280 200 pf operating junction temperature range t j -65 to +150 storage temperature range t stg -65 to +175 notes: 1. 2.0us pulse width, f=1.0 khz 2. pulse test: 300us pulse width, 1% duty cycle 3. mounted on heatsink size of 2 in x 3 in x 0.25in al-plate. .071(1.8) max .161(4.1) .146(3.7) .118(3.00) .124(3.16) .185(4.7) .173(4.4) .272(6.9) .248(6.3) .063(1.6) max .100(2.55) .543(13.8) .512(13.2) .100(2.55) .110(2.8) .098(2.5) .606(15.5) .583(14.8) .112(2.85) .100(2.55) .406(10.3) .390(9.90) .134(3.4)dia .113(3.0)dia 2 pin 1 pin 2 case positive
-75- ratings and characteristic curves (mbrf735 thru mbrf7100) fig.1- forward current derating curve average for ward current . (a) 0 50 100 150 0 2 4 6 8 10 case temperature. ( c) o resistive or inductive load mbrf735-mbrf745 mbrf750-mbrf7100 fig.2- maximum non-repetitive forward surge current peak for ward surge current . (a) 1 10 100 25 50 75 125 100 150 175 number of cycles at 60hz tj=tj max. 8.3ms single half sine wave jedec method fig.3- typical instantaneous forward characteristics instantaneous for ward current . (a) 0.6 0.8 1.0 1.1 0.9 0.7 0.5 0.4 0.3 0.2 0.1 0 1.2 0.1 0.01 1 10 40 forward voltage. (v) pulse width=300 s 1% duty cycle tj=25 c 0 tj=125 c 0 mbrf735-mbrf745 mbrf750-mbrf760 MBRF790-mbrf7100 fig.4- typical reverse characteristics instantaneous reverse current .(ma) 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage. (%) 0.001 0.1 0.01 1 10 50 mbrf735-mbrf745 mbrf750-mbrf7100 tj=125 c 0 tj=25 c 0 tj=75 c 0 fig.6- typical transient thermal characteristics transient thermal impedance. ( c/w) o 1 0.01 0.1 10 100 0.1 10.0 1 100 t, pulse duration. (sec) fig.5- typical junction capacitance junction cap acitance.(pf) 0.1 1.0 10 100 40 100 1,000 4,000 reverse voltage. (v) tj=25 c f=1.0mhz vsig=50mvp-p 0 mbrf735-mbrf745 mbrf750-mbrf760 MBRF790-mbrf7100
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